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A National Network Of Accelerators Dedicated To Material Irradiation (EMIR)
Hosting Legal Entity
University of Tartu
Coordinating Country
Estonia
Type Of RI
Distributed
Life Cycle Status
Construction since 2011
Location
Viljandi mnt. 42, Institute of Physics, University of Tartu, Tartu, PO: 50412 (Estonia), Estonia(58.367301940918, 26.6790161132812)
RI Keywords
Microscopy,Material sciences,Nano
RI Category
Micro- and Nanotechnology facilities;Analytical Facilities;Materials Synthesis or Testing Facilities;Electrical and Optical Engineering Facilities
Scientific Domain
Physics, Astronomy, Astrophysics and Mathematics;Chemistry and Material Sciences;Engineering and Energy

Mission and Objective

NAMUR is a multidisciplinary, decentralized material research infrastructure in Estonia with the primary goals of: providing a world-level research infrastructure for material characterization at nano- and sub-nanometre scale. making Estonia visible as a potential source of high level knowledge in the field of nano scale material science. increasing knowledge and providing an educational platform for nanoscale material science. The infrastructure is composed of three separate facilities: a High Resolution Transmission Electron microscope (HR-TEM). a Time of Flight secondary Ion Mass Spectrometer (ToF-SIMS). and a High Resolution Scanning Electron Microscope equipped with material characterization complex (MAT-SEM). The infrastructure is jointly owned by two Estonian universities: the University of Tartu and Tallinn University of Technology.

Service

- Materials Characterisation

HR-TEM, MAT-SEM and ToF-SIMS facilities are supported by a full-time machine operator and include sample preparation and help in interpreting the measurement results.

Equipment

- High Resolution Transmission Electron Microscope

High Resolution Transmission Electron Microscope (HR-TEM) provides nanoscale imaging and element analysis of specially prepared material samples with sub-nanometre resolution for investigating atom level properties of materials.

- Time of Flight Secondary Ion Mass Spectrometer

The Time of Flight Secondary Ion Mass Spectrometer (ToF-SIMS) is used for measuring the chemical element composition of a material with high spatial accuracy. ToF-SIMS facility provides a service for characterizing materials’ chemical composition both at high lateral accuracy (0.5 – 1.0 microns) and mass selectivity (M/dM>11000). The set-up also provides an Ion gun for accurate materials cutting and edging in situ for depth profiling.

- MAT - Scanning Electron Microscope

The High Resolution Scanning Electron Microscope (MAT-SEM) is equipped for materials growth and characterization set-up. An apparatus for high resolution imaging and characterization of materials and objects with scattered electrons and high accuracy mass measurements. The MAT-SEM facility provides a complex service of growing thin film materials with laser ablation deice NANO-PLD-1000 and measuring the mass and structural properties with crystal resonance mass detector and high resolution (down to 0.6 nm) scanning electron microscope.